Please use this identifier to cite or link to this item: https://doi.org/10.1039/c3ra41156g
Title: Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications
Authors: Kumar, A.
Dalapati, G.K.
Hidayat, H.
Law, F.
Tan, H.R.
Widenborg, P.I. 
Hoex, B. 
Tan, C.C.
Chi, D.Z.
Aberle, A.G. 
Issue Date: 7-Jun-2013
Citation: Kumar, A., Dalapati, G.K., Hidayat, H., Law, F., Tan, H.R., Widenborg, P.I., Hoex, B., Tan, C.C., Chi, D.Z., Aberle, A.G. (2013-06-07). Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications. RSC Advances 3 (21) : 7733-7738. ScholarBank@NUS Repository. https://doi.org/10.1039/c3ra41156g
Abstract: Aluminum-alloyed polycrystalline p-type β-phase iron disilicide p-β-FeSi2(Al) films with different thicknesses are successfully integrated with n-type polycrystalline silicon films on glass for thin-film solar cell applications. A sharp and high-quality interface is formed between 49 nm thick β-FeSi2(Al) and poly-Si, through the formation of a thin layer (∼7 nm) of Al-doped p+ epitaxial Si. The quality of the interface between poly-Si and p-β-FeSi2(Al) is found to degrade with increasing p-β-FeSi2(Al) thickness. An ∼5 nm thick amorphous layer is observed at the interface for the 145 nm thick p-β-FeSi2(Al) layer. The structural and photovoltaic characteristics of the p-type β-FeSi2/p+ Si/n - Si/n+ Si solar cell samples are investigated in detail. For a sample annealed at 650 °C, a one-Sun open-circuit voltage of 320 mV and pseudo fill factor of 67% are obtained, using an ∼49 nm p-type β-FeSi2 film on n-type poly-Si. The efficiency of the investigated solar cell structure decreases with increasing annealing temperature and thickness of the β-FeSi2 film. © 2013 The Royal Society of Chemistry.
Source Title: RSC Advances
URI: http://scholarbank.nus.edu.sg/handle/10635/82552
ISSN: 20462069
DOI: 10.1039/c3ra41156g
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