Please use this identifier to cite or link to this item:
https://doi.org/10.1039/c3ra41156g
DC Field | Value | |
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dc.title | Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications | |
dc.contributor.author | Kumar, A. | |
dc.contributor.author | Dalapati, G.K. | |
dc.contributor.author | Hidayat, H. | |
dc.contributor.author | Law, F. | |
dc.contributor.author | Tan, H.R. | |
dc.contributor.author | Widenborg, P.I. | |
dc.contributor.author | Hoex, B. | |
dc.contributor.author | Tan, C.C. | |
dc.contributor.author | Chi, D.Z. | |
dc.contributor.author | Aberle, A.G. | |
dc.date.accessioned | 2014-10-07T04:30:43Z | |
dc.date.available | 2014-10-07T04:30:43Z | |
dc.date.issued | 2013-06-07 | |
dc.identifier.citation | Kumar, A., Dalapati, G.K., Hidayat, H., Law, F., Tan, H.R., Widenborg, P.I., Hoex, B., Tan, C.C., Chi, D.Z., Aberle, A.G. (2013-06-07). Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications. RSC Advances 3 (21) : 7733-7738. ScholarBank@NUS Repository. https://doi.org/10.1039/c3ra41156g | |
dc.identifier.issn | 20462069 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82552 | |
dc.description.abstract | Aluminum-alloyed polycrystalline p-type β-phase iron disilicide p-β-FeSi2(Al) films with different thicknesses are successfully integrated with n-type polycrystalline silicon films on glass for thin-film solar cell applications. A sharp and high-quality interface is formed between 49 nm thick β-FeSi2(Al) and poly-Si, through the formation of a thin layer (∼7 nm) of Al-doped p+ epitaxial Si. The quality of the interface between poly-Si and p-β-FeSi2(Al) is found to degrade with increasing p-β-FeSi2(Al) thickness. An ∼5 nm thick amorphous layer is observed at the interface for the 145 nm thick p-β-FeSi2(Al) layer. The structural and photovoltaic characteristics of the p-type β-FeSi2/p+ Si/n - Si/n+ Si solar cell samples are investigated in detail. For a sample annealed at 650 °C, a one-Sun open-circuit voltage of 320 mV and pseudo fill factor of 67% are obtained, using an ∼49 nm p-type β-FeSi2 film on n-type poly-Si. The efficiency of the investigated solar cell structure decreases with increasing annealing temperature and thickness of the β-FeSi2 film. © 2013 The Royal Society of Chemistry. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c3ra41156g | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | SOLAR ENERGY RESEARCH INST OF S'PORE | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1039/c3ra41156g | |
dc.description.sourcetitle | RSC Advances | |
dc.description.volume | 3 | |
dc.description.issue | 21 | |
dc.description.page | 7733-7738 | |
dc.identifier.isiut | 000318634000016 | |
Appears in Collections: | Staff Publications |
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