Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1633567

Title:	Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP
Authors:	Tripathy, S. Thwin-Htoo Chua, S.J.
Issue Date:	Jan-2004
Citation:	Tripathy, S., Thwin-Htoo, Chua, S.J. (2004-01). Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (1) : 111-116. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1633567
Abstract:	Vibrational properties of In 1-x-yGa xAl yAs(x=0.13, y=0.34) layers that were grown lattice matched to InP(100) were studied. Micro-Raman scattering was used to study the quality of epitaxial films and atomic force microscopy was used to study the surface topography. The results show the three-mode behavior of optical phonons in quaternary alloys. It was also found that the narrowest Raman linewidth and much weaker forbidden modes are found in the layer grown on InP(100).
Source Title:	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/82540
ISSN:	07342101
DOI:	10.1116/1.1633567
Appears in Collections:	Staff Publications

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