Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.tsf.2005.10.023
Title: | Diluted magnetic semiconductor Ge1-xMnxTe films prepared by molecular beam epitaxy | Authors: | Chen, W.Q. Teo, K.L. Jalil, M.B.A. Liew, Y.F. Chong, T.C. |
Keywords: | Diluted magnetic semiconductor Ge 1-xMnxTe Molecular beam epitaxy |
Issue Date: | 18-May-2006 | Citation: | Chen, W.Q., Teo, K.L., Jalil, M.B.A., Liew, Y.F., Chong, T.C. (2006-05-18). Diluted magnetic semiconductor Ge1-xMnxTe films prepared by molecular beam epitaxy. Thin Solid Films 505 (1-2) : 145-147. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.023 | Abstract: | We report the growth of IV-VI diluted magnetic semiconductor Ge 1-xMnxTe thin films on BaF2 (111) substrates with high Mn ion concentration (x = 0.98) by solid-source molecular-beam epitaxy. The film structure and orientation were characterized by in-situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical concentration was determined by X-ray Photoelectron Spectroscopy (XPS). The thin film shows ferromagnetic ordering at 130 K, as determined from temperature-dependent magnetization. © 2005 Elsevier B.V. All rights reserved. | Source Title: | Thin Solid Films | URI: | http://scholarbank.nus.edu.sg/handle/10635/82156 | ISSN: | 00406090 | DOI: | 10.1016/j.tsf.2005.10.023 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
5
checked on Dec 10, 2019
WEB OF SCIENCETM
Citations
5
checked on Dec 3, 2019
Page view(s)
63
checked on Nov 30, 2019
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.