Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.10.023
Title: Diluted magnetic semiconductor Ge1-xMnxTe films prepared by molecular beam epitaxy
Authors: Chen, W.Q.
Teo, K.L. 
Jalil, M.B.A. 
Liew, Y.F. 
Chong, T.C.
Keywords: Diluted magnetic semiconductor
Ge 1-xMnxTe
Molecular beam epitaxy
Issue Date: 18-May-2006
Citation: Chen, W.Q., Teo, K.L., Jalil, M.B.A., Liew, Y.F., Chong, T.C. (2006-05-18). Diluted magnetic semiconductor Ge1-xMnxTe films prepared by molecular beam epitaxy. Thin Solid Films 505 (1-2) : 145-147. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.023
Abstract: We report the growth of IV-VI diluted magnetic semiconductor Ge 1-xMnxTe thin films on BaF2 (111) substrates with high Mn ion concentration (x = 0.98) by solid-source molecular-beam epitaxy. The film structure and orientation were characterized by in-situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical concentration was determined by X-ray Photoelectron Spectroscopy (XPS). The thin film shows ferromagnetic ordering at 130 K, as determined from temperature-dependent magnetization. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/82156
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.10.023
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