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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.10.023
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dc.titleDiluted magnetic semiconductor Ge1-xMnxTe films prepared by molecular beam epitaxy
dc.contributor.authorChen, W.Q.
dc.contributor.authorTeo, K.L.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorLiew, Y.F.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:26:03Z
dc.date.available2014-10-07T04:26:03Z
dc.date.issued2006-05-18
dc.identifier.citationChen, W.Q., Teo, K.L., Jalil, M.B.A., Liew, Y.F., Chong, T.C. (2006-05-18). Diluted magnetic semiconductor Ge1-xMnxTe films prepared by molecular beam epitaxy. Thin Solid Films 505 (1-2) : 145-147. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.023
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82156
dc.description.abstractWe report the growth of IV-VI diluted magnetic semiconductor Ge 1-xMnxTe thin films on BaF2 (111) substrates with high Mn ion concentration (x = 0.98) by solid-source molecular-beam epitaxy. The film structure and orientation were characterized by in-situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical concentration was determined by X-ray Photoelectron Spectroscopy (XPS). The thin film shows ferromagnetic ordering at 130 K, as determined from temperature-dependent magnetization. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.10.023
dc.sourceScopus
dc.subjectDiluted magnetic semiconductor
dc.subjectGe 1-xMnxTe
dc.subjectMolecular beam epitaxy
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2005.10.023
dc.description.sourcetitleThin Solid Films
dc.description.volume505
dc.description.issue1-2
dc.description.page145-147
dc.description.codenTHSFA
dc.identifier.isiut000236440600033
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