Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.200903469
Title: Conjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effect
Authors: Zhuang, X.-D.
Chen, Y.
Liu, G. 
Li, P.-P.
Zhu, C.-X. 
Kang, E.-T. 
Neoh, K.-G. 
Zhang, B.
Zhu, J.-H.
Li, Y.-X.
Issue Date: 18-Apr-2010
Citation: Zhuang, X.-D., Chen, Y., Liu, G., Li, P.-P., Zhu, C.-X., Kang, E.-T., Neoh, K.-G., Zhang, B., Zhu, J.-H., Li, Y.-X. (2010-04-18). Conjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effect. Advanced Materials 22 (15) : 1731-1735. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200903469
Abstract: (Figure Presented) An ITO/TPAPAM-GO/AI memory device (see figure; ITO = indium tin oxide, TPAPAMGO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of -1.0 V and an ON/OFF-state current ratio of more than 103. Both ON and OFF state are stable under a constant voltage stress and survive up to 108 read cycles at a read voltage of -1.0 V. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA,.
Source Title: Advanced Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/82083
ISSN: 09359648
DOI: 10.1002/adma.200903469
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