Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.200903469
DC FieldValue
dc.titleConjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effect
dc.contributor.authorZhuang, X.-D.
dc.contributor.authorChen, Y.
dc.contributor.authorLiu, G.
dc.contributor.authorLi, P.-P.
dc.contributor.authorZhu, C.-X.
dc.contributor.authorKang, E.-T.
dc.contributor.authorNeoh, K.-G.
dc.contributor.authorZhang, B.
dc.contributor.authorZhu, J.-H.
dc.contributor.authorLi, Y.-X.
dc.date.accessioned2014-10-07T04:25:12Z
dc.date.available2014-10-07T04:25:12Z
dc.date.issued2010-04-18
dc.identifier.citationZhuang, X.-D., Chen, Y., Liu, G., Li, P.-P., Zhu, C.-X., Kang, E.-T., Neoh, K.-G., Zhang, B., Zhu, J.-H., Li, Y.-X. (2010-04-18). Conjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effect. Advanced Materials 22 (15) : 1731-1735. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200903469
dc.identifier.issn09359648
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82083
dc.description.abstract(Figure Presented) An ITO/TPAPAM-GO/AI memory device (see figure; ITO = indium tin oxide, TPAPAMGO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of -1.0 V and an ON/OFF-state current ratio of more than 103. Both ON and OFF state are stable under a constant voltage stress and survive up to 108 read cycles at a read voltage of -1.0 V. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA,.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/adma.200903469
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.contributor.departmentMECHANICAL ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/adma.200903469
dc.description.sourcetitleAdvanced Materials
dc.description.volume22
dc.description.issue15
dc.description.page1731-1735
dc.description.codenADVME
dc.identifier.isiut000277369600005
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