Please use this identifier to cite or link to this item:
https://doi.org/10.1002/adma.200903469
DC Field | Value | |
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dc.title | Conjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effect | |
dc.contributor.author | Zhuang, X.-D. | |
dc.contributor.author | Chen, Y. | |
dc.contributor.author | Liu, G. | |
dc.contributor.author | Li, P.-P. | |
dc.contributor.author | Zhu, C.-X. | |
dc.contributor.author | Kang, E.-T. | |
dc.contributor.author | Neoh, K.-G. | |
dc.contributor.author | Zhang, B. | |
dc.contributor.author | Zhu, J.-H. | |
dc.contributor.author | Li, Y.-X. | |
dc.date.accessioned | 2014-10-07T04:25:12Z | |
dc.date.available | 2014-10-07T04:25:12Z | |
dc.date.issued | 2010-04-18 | |
dc.identifier.citation | Zhuang, X.-D., Chen, Y., Liu, G., Li, P.-P., Zhu, C.-X., Kang, E.-T., Neoh, K.-G., Zhang, B., Zhu, J.-H., Li, Y.-X. (2010-04-18). Conjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effect. Advanced Materials 22 (15) : 1731-1735. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200903469 | |
dc.identifier.issn | 09359648 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82083 | |
dc.description.abstract | (Figure Presented) An ITO/TPAPAM-GO/AI memory device (see figure; ITO = indium tin oxide, TPAPAMGO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of -1.0 V and an ON/OFF-state current ratio of more than 103. Both ON and OFF state are stable under a constant voltage stress and survive up to 108 read cycles at a read voltage of -1.0 V. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA,. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/adma.200903469 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | CHEMICAL & BIOMOLECULAR ENGINEERING | |
dc.contributor.department | MECHANICAL ENGINEERING | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1002/adma.200903469 | |
dc.description.sourcetitle | Advanced Materials | |
dc.description.volume | 22 | |
dc.description.issue | 15 | |
dc.description.page | 1731-1735 | |
dc.description.coden | ADVME | |
dc.identifier.isiut | 000277369600005 | |
Appears in Collections: | Staff Publications |
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