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|Title:||A highly linear fully integrated CMOS power amplifier with an analog predistortion technique||Authors:||Jin, B.
|Issue Date:||May-2011||Citation:||Jin, B., Li, L., Wu, Q., Yang, G., Zhang, K. (2011-05). A highly linear fully integrated CMOS power amplifier with an analog predistortion technique. Journal of Semiconductors 32 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1674-4926/32/5/054006||Abstract:||A transformer-based CMOS power amplifier (PA) is linearized using an analog predistortion technique for a 2.5-GHz m-WiMAX transmitter. The third harmonic of the power stage and driver stage can be cancelled out in a specific power region. The two-stage PA fabricated in a standard 0.18-μm CMOS process delivers 27.5 dBm with 27% PAE at the 1-dB compression point (P1dB) and offers 21 dB gain. The PA achieves 5.5 % EVM and meets the spectrum mask at 20.5 dBm average power. Another conventional PA with a zero-cross-point of gm3 bias is also fabricated and compared to prove its good linearity and efficiency. © 2011 Chinese Institute of Electronics.||Source Title:||Journal of Semiconductors||URI:||http://scholarbank.nus.edu.sg/handle/10635/81874||ISSN:||16744926||DOI:||10.1088/1674-4926/32/5/054006|
|Appears in Collections:||Staff Publications|
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