Please use this identifier to cite or link to this item: https://doi.org/10.1088/1674-4926/32/5/054006
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dc.titleA highly linear fully integrated CMOS power amplifier with an analog predistortion technique
dc.contributor.authorJin, B.
dc.contributor.authorLi, L.
dc.contributor.authorWu, Q.
dc.contributor.authorYang, G.
dc.contributor.authorZhang, K.
dc.date.accessioned2014-10-07T04:22:43Z
dc.date.available2014-10-07T04:22:43Z
dc.date.issued2011-05
dc.identifier.citationJin, B., Li, L., Wu, Q., Yang, G., Zhang, K. (2011-05). A highly linear fully integrated CMOS power amplifier with an analog predistortion technique. Journal of Semiconductors 32 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1674-4926/32/5/054006
dc.identifier.issn16744926
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81874
dc.description.abstractA transformer-based CMOS power amplifier (PA) is linearized using an analog predistortion technique for a 2.5-GHz m-WiMAX transmitter. The third harmonic of the power stage and driver stage can be cancelled out in a specific power region. The two-stage PA fabricated in a standard 0.18-μm CMOS process delivers 27.5 dBm with 27% PAE at the 1-dB compression point (P1dB) and offers 21 dB gain. The PA achieves 5.5 % EVM and meets the spectrum mask at 20.5 dBm average power. Another conventional PA with a zero-cross-point of gm3 bias is also fabricated and compared to prove its good linearity and efficiency. © 2011 Chinese Institute of Electronics.
dc.sourceScopus
dc.subjectanalog predistortion
dc.subjectCMOS
dc.subjectlinear
dc.subjectm-WiMAX
dc.subjectpower amplifier
dc.subjecttransformer
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1088/1674-4926/32/5/054006
dc.description.sourcetitleJournal of Semiconductors
dc.description.volume32
dc.description.issue5
dc.description.page-
dc.identifier.isiut000215935300013
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