Please use this identifier to cite or link to this item: https://doi.org/10.1088/1674-4926/32/5/054006
Title: A highly linear fully integrated CMOS power amplifier with an analog predistortion technique
Authors: Jin, B.
Li, L. 
Wu, Q.
Yang, G.
Zhang, K.
Keywords: analog predistortion
CMOS
linear
m-WiMAX
power amplifier
transformer
Issue Date: May-2011
Citation: Jin, B., Li, L., Wu, Q., Yang, G., Zhang, K. (2011-05). A highly linear fully integrated CMOS power amplifier with an analog predistortion technique. Journal of Semiconductors 32 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1674-4926/32/5/054006
Abstract: A transformer-based CMOS power amplifier (PA) is linearized using an analog predistortion technique for a 2.5-GHz m-WiMAX transmitter. The third harmonic of the power stage and driver stage can be cancelled out in a specific power region. The two-stage PA fabricated in a standard 0.18-μm CMOS process delivers 27.5 dBm with 27% PAE at the 1-dB compression point (P1dB) and offers 21 dB gain. The PA achieves 5.5 % EVM and meets the spectrum mask at 20.5 dBm average power. Another conventional PA with a zero-cross-point of gm3 bias is also fabricated and compared to prove its good linearity and efficiency. © 2011 Chinese Institute of Electronics.
Source Title: Journal of Semiconductors
URI: http://scholarbank.nus.edu.sg/handle/10635/81874
ISSN: 16744926
DOI: 10.1088/1674-4926/32/5/054006
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