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https://doi.org/10.1088/1674-4926/32/5/054006
Title: | A highly linear fully integrated CMOS power amplifier with an analog predistortion technique | Authors: | Jin, B. Li, L. Wu, Q. Yang, G. Zhang, K. |
Keywords: | analog predistortion CMOS linear m-WiMAX power amplifier transformer |
Issue Date: | May-2011 | Citation: | Jin, B., Li, L., Wu, Q., Yang, G., Zhang, K. (2011-05). A highly linear fully integrated CMOS power amplifier with an analog predistortion technique. Journal of Semiconductors 32 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1674-4926/32/5/054006 | Abstract: | A transformer-based CMOS power amplifier (PA) is linearized using an analog predistortion technique for a 2.5-GHz m-WiMAX transmitter. The third harmonic of the power stage and driver stage can be cancelled out in a specific power region. The two-stage PA fabricated in a standard 0.18-μm CMOS process delivers 27.5 dBm with 27% PAE at the 1-dB compression point (P1dB) and offers 21 dB gain. The PA achieves 5.5 % EVM and meets the spectrum mask at 20.5 dBm average power. Another conventional PA with a zero-cross-point of gm3 bias is also fabricated and compared to prove its good linearity and efficiency. © 2011 Chinese Institute of Electronics. | Source Title: | Journal of Semiconductors | URI: | http://scholarbank.nus.edu.sg/handle/10635/81874 | ISSN: | 16744926 | DOI: | 10.1088/1674-4926/32/5/054006 |
Appears in Collections: | Staff Publications |
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