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|Title:||Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere||Authors:||Lu, Y.F.
|Issue Date:||1-Sep-1998||Citation:||Lu, Y.F.,Ren, Z.M.,Song, W.D.,Chan, D.S.H.,Low, T.S.,Gamani, K.,Chen, G.,Li, K. (1998-09-01). Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere. Journal of Applied Physics 84 (5) : 2909-2912. ScholarBank@NUS Repository.||Abstract:||Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in a nitrogen atmosphere. Different excimer laser fluences and pressures of the nitrogen atmosphere were used in order to achieve a nitrogen content as high as possible in the deposited thin films. Fourier transform infrared and x-ray photoelectron spectroscopies were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The N/C ratio 0.42 was obtained at an excimer laser fluence of 0.8 J cm-2 at a repetition rate of 10 Hz under a nitrogen pressure of PN= 100 mTorr. A high content of C=N double bond instead of C≡N triple band was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductorlike characteristics with an optical band gap Eopt of 0.42 eV. © 1998 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/81228||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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