Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81228
Title: Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere
Authors: Lu, Y.F. 
Ren, Z.M.
Song, W.D. 
Chan, D.S.H. 
Low, T.S. 
Gamani, K. 
Chen, G. 
Li, K.
Issue Date: 1-Sep-1998
Citation: Lu, Y.F.,Ren, Z.M.,Song, W.D.,Chan, D.S.H.,Low, T.S.,Gamani, K.,Chen, G.,Li, K. (1998-09-01). Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere. Journal of Applied Physics 84 (5) : 2909-2912. ScholarBank@NUS Repository.
Abstract: Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in a nitrogen atmosphere. Different excimer laser fluences and pressures of the nitrogen atmosphere were used in order to achieve a nitrogen content as high as possible in the deposited thin films. Fourier transform infrared and x-ray photoelectron spectroscopies were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The N/C ratio 0.42 was obtained at an excimer laser fluence of 0.8 J cm-2 at a repetition rate of 10 Hz under a nitrogen pressure of PN= 100 mTorr. A high content of C=N double bond instead of C≡N triple band was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductorlike characteristics with an optical band gap Eopt of 0.42 eV. © 1998 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/81228
ISSN: 00218979
Appears in Collections:Staff Publications

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