Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(00)00156-8

Title:	Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides
Authors:	Ang, C.-H. Ling, C.-H. Cho, B.-J. Kim, S.-J. Cheng, Z.-Y.
Issue Date:	1-Nov-2000
Citation:	Ang, C.-H., Ling, C.-H., Cho, B.-J., Kim, S.-J., Cheng, Z.-Y. (2000-11-01). Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides. Solid-State Electronics 44 (11) : 2001-2007. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(00)00156-8
Abstract:	Based on carrier-separation measurement on pMOSFET, we show the existence of hole trap-assisted tunneling (HTAT) current after 10 keV X-ray irradiation on ultrathin gate oxide. The characteristics of this current have been studied in detail and compared with the corresponding current due to electrical stress. No essential difference is found between the HTAT currents due to ionizing radiation and electrical stress. The results indicate that these two currents have similar origin.
Source Title:	Solid-State Electronics
URI:	http://scholarbank.nus.edu.sg/handle/10635/81038
ISSN:	00381101
DOI:	10.1016/S0038-1101(00)00156-8
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check