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Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(00)00156-8
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dc.titleRadiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides
dc.contributor.authorAng, C.-H.
dc.contributor.authorLing, C.-H.
dc.contributor.authorCho, B.-J.
dc.contributor.authorKim, S.-J.
dc.contributor.authorCheng, Z.-Y.
dc.date.accessioned2014-10-07T03:03:59Z
dc.date.available2014-10-07T03:03:59Z
dc.date.issued2000-11-01
dc.identifier.citationAng, C.-H., Ling, C.-H., Cho, B.-J., Kim, S.-J., Cheng, Z.-Y. (2000-11-01). Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides. Solid-State Electronics 44 (11) : 2001-2007. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(00)00156-8
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81038
dc.description.abstractBased on carrier-separation measurement on pMOSFET, we show the existence of hole trap-assisted tunneling (HTAT) current after 10 keV X-ray irradiation on ultrathin gate oxide. The characteristics of this current have been studied in detail and compared with the corresponding current due to electrical stress. No essential difference is found between the HTAT currents due to ionizing radiation and electrical stress. The results indicate that these two currents have similar origin.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0038-1101(00)00156-8
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1016/S0038-1101(00)00156-8
dc.description.sourcetitleSolid-State Electronics
dc.description.volume44
dc.description.issue11
dc.description.page2001-2007
dc.description.codenSSELA
dc.identifier.isiut000165546700016
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