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|Title:||Isolation process induced wafer warpage||Authors:||Jang, S.-A.
|Issue Date:||Jul-1998||Citation:||Jang, S.-A.,Yeo, I.-S.,Kim, Y.-B.,Cho, B.-J.,Lee, S.-K. (1998-07). Isolation process induced wafer warpage. Electrochemical and Solid-State Letters 1 (1) : 46-48. ScholarBank@NUS Repository.||Abstract:||Wafer warpage behavior during a local oxidation of silicon isolation process was investigated. Anisotropic etching of the front side nitride produced unbalanced stress states between front and back side nitride films, and caused a large wafer warpage. The maximum warpage was observed after field oxidation due to a wedge-effect of field oxide on the front side. Plastic deformation was shown to occur when the maximum warpage after field oxidation exceeded a critical value, although the warpage dramatically decreased after nitride stripping. © 1998 The Electrochemical Society, Inc.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80643||ISSN:||10990062|
|Appears in Collections:||Staff Publications|
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