Please use this identifier to cite or link to this item:
|Title:||Isolation process induced wafer warpage|
|Source:||Jang, S.-A.,Yeo, I.-S.,Kim, Y.-B.,Cho, B.-J.,Lee, S.-K. (1998-07). Isolation process induced wafer warpage. Electrochemical and Solid-State Letters 1 (1) : 46-48. ScholarBank@NUS Repository.|
|Abstract:||Wafer warpage behavior during a local oxidation of silicon isolation process was investigated. Anisotropic etching of the front side nitride produced unbalanced stress states between front and back side nitride films, and caused a large wafer warpage. The maximum warpage was observed after field oxidation due to a wedge-effect of field oxide on the front side. Plastic deformation was shown to occur when the maximum warpage after field oxidation exceeded a critical value, although the warpage dramatically decreased after nitride stripping. © 1998 The Electrochemical Society, Inc.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.