Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80643
DC FieldValue
dc.titleIsolation process induced wafer warpage
dc.contributor.authorJang, S.-A.
dc.contributor.authorYeo, I.-S.
dc.contributor.authorKim, Y.-B.
dc.contributor.authorCho, B.-J.
dc.contributor.authorLee, S.-K.
dc.date.accessioned2014-10-07T02:59:45Z
dc.date.available2014-10-07T02:59:45Z
dc.date.issued1998-07
dc.identifier.citationJang, S.-A.,Yeo, I.-S.,Kim, Y.-B.,Cho, B.-J.,Lee, S.-K. (1998-07). Isolation process induced wafer warpage. Electrochemical and Solid-State Letters 1 (1) : 46-48. ScholarBank@NUS Repository.
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80643
dc.description.abstractWafer warpage behavior during a local oxidation of silicon isolation process was investigated. Anisotropic etching of the front side nitride produced unbalanced stress states between front and back side nitride films, and caused a large wafer warpage. The maximum warpage was observed after field oxidation due to a wedge-effect of field oxide on the front side. Plastic deformation was shown to occur when the maximum warpage after field oxidation exceeded a critical value, although the warpage dramatically decreased after nitride stripping. © 1998 The Electrochemical Society, Inc.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume1
dc.description.issue1
dc.description.page46-48
dc.description.codenESLEF
dc.identifier.isiutNOT_IN_WOS
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