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|Title:||Spin polarization of electrons in Landau spin orbit coupling semiconductor system||Authors:||Tan, S.G.
|Issue Date:||15-May-2005||Citation:||Tan, S.G., Jalil, M.B.A., Teo, K.L., Liew, T. (2005-05-15). Spin polarization of electrons in Landau spin orbit coupling semiconductor system. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1854474||Abstract:||We present a device model that couples electron spin to the crystal field, external magnetic, and transverse electric field Ey, such that current jx transport in the ballistic regime is produced. As Ey modulates jx and its polarization P at a particular distance y, our model shows that the Landau spin-orbit system can implement the functions of a spin-field-effect transistor. We have found that a net P can be obtained in the z axis, thus allowing resistance detection to be performed in that axis. Further calculations show spatial variation of P across the cyclotron diameter that increases with higher Landau levels. © 2005 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/71846||ISSN:||00218979||DOI:||10.1063/1.1854474|
|Appears in Collections:||Staff Publications|
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