Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1854474
Title: Spin polarization of electrons in Landau spin orbit coupling semiconductor system
Authors: Tan, S.G. 
Jalil, M.B.A. 
Teo, K.L. 
Liew, T. 
Issue Date: 15-May-2005
Citation: Tan, S.G., Jalil, M.B.A., Teo, K.L., Liew, T. (2005-05-15). Spin polarization of electrons in Landau spin orbit coupling semiconductor system. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1854474
Abstract: We present a device model that couples electron spin to the crystal field, external magnetic, and transverse electric field Ey, such that current jx transport in the ballistic regime is produced. As Ey modulates jx and its polarization P at a particular distance y, our model shows that the Landau spin-orbit system can implement the functions of a spin-field-effect transistor. We have found that a net P can be obtained in the z axis, thus allowing resistance detection to be performed in that axis. Further calculations show spatial variation of P across the cyclotron diameter that increases with higher Landau levels. © 2005 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/71846
ISSN: 00218979
DOI: 10.1063/1.1854474
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

6
checked on Jun 16, 2018

WEB OF SCIENCETM
Citations

7
checked on May 30, 2018

Page view(s)

48
checked on Jun 1, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.