Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1854474
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dc.titleSpin polarization of electrons in Landau spin orbit coupling semiconductor system
dc.contributor.authorTan, S.G.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTeo, K.L.
dc.contributor.authorLiew, T.
dc.date.accessioned2014-06-19T03:28:29Z
dc.date.available2014-06-19T03:28:29Z
dc.date.issued2005-05-15
dc.identifier.citationTan, S.G., Jalil, M.B.A., Teo, K.L., Liew, T. (2005-05-15). Spin polarization of electrons in Landau spin orbit coupling semiconductor system. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1854474
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71846
dc.description.abstractWe present a device model that couples electron spin to the crystal field, external magnetic, and transverse electric field Ey, such that current jx transport in the ballistic regime is produced. As Ey modulates jx and its polarization P at a particular distance y, our model shows that the Landau spin-orbit system can implement the functions of a spin-field-effect transistor. We have found that a net P can be obtained in the z axis, thus allowing resistance detection to be performed in that axis. Further calculations show spatial variation of P across the cyclotron diameter that increases with higher Landau levels. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1854474
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.doi10.1063/1.1854474
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume97
dc.description.issue10
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000230168300048
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