Magnetoelectronic device utilizing the Dresselhaus spin-orbit coupling

Abstract

We propose a ballistic device model which harnesses the Dresselhaus spin-orbit coupling effect to induce spin polarization ∫P∫ by constraining the transverse electron wave vector kx to specific, quantized values and aligning the crystalline c axis along the electron conduction path z. ∫P∫ induced in this magnetoelectronic device is further enhanced by applying a periodic system of delta magnetoelectric barriers that constitute a net "zero- A " periodic unit. Calculations for GaAs, GaSb, and InSb show a field enhancement of ∫P∫ from peak 2%-3% to 10%-80% near the conduction band. Magnetic and electric potentials have been shown to modulate ∫P∫ with few gate elements required. © 2005 American Institute of Physics.