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|Title:||Magnetoelectronic device utilizing the Dresselhaus spin-orbit coupling||Authors:||Tan, S.G.
|Issue Date:||15-May-2005||Citation:||Tan, S.G., Jalil, M.B.A., Liew, T., Teo, K.L., Chong, T.C. (2005-05-15). Magnetoelectronic device utilizing the Dresselhaus spin-orbit coupling. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1855198||Abstract:||We propose a ballistic device model which harnesses the Dresselhaus spin-orbit coupling effect to induce spin polarization ∫P∫ by constraining the transverse electron wave vector kx to specific, quantized values and aligning the crystalline c axis along the electron conduction path z. ∫P∫ induced in this magnetoelectronic device is further enhanced by applying a periodic system of delta magnetoelectric barriers that constitute a net "zero- A " periodic unit. Calculations for GaAs, GaSb, and InSb show a field enhancement of ∫P∫ from peak 2%-3% to 10%-80% near the conduction band. Magnetic and electric potentials have been shown to modulate ∫P∫ with few gate elements required. © 2005 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/70874||ISSN:||00218979||DOI:||10.1063/1.1855198|
|Appears in Collections:||Staff Publications|
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