Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1855198
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dc.titleMagnetoelectronic device utilizing the Dresselhaus spin-orbit coupling
dc.contributor.authorTan, S.G.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorLiew, T.
dc.contributor.authorTeo, K.L.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-06-19T03:17:16Z
dc.date.available2014-06-19T03:17:16Z
dc.date.issued2005-05-15
dc.identifier.citationTan, S.G., Jalil, M.B.A., Liew, T., Teo, K.L., Chong, T.C. (2005-05-15). Magnetoelectronic device utilizing the Dresselhaus spin-orbit coupling. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1855198
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70874
dc.description.abstractWe propose a ballistic device model which harnesses the Dresselhaus spin-orbit coupling effect to induce spin polarization ∫P∫ by constraining the transverse electron wave vector kx to specific, quantized values and aligning the crystalline c axis along the electron conduction path z. ∫P∫ induced in this magnetoelectronic device is further enhanced by applying a periodic system of delta magnetoelectric barriers that constitute a net "zero- A " periodic unit. Calculations for GaAs, GaSb, and InSb show a field enhancement of ∫P∫ from peak 2%-3% to 10%-80% near the conduction band. Magnetic and electric potentials have been shown to modulate ∫P∫ with few gate elements required. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1855198
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.doi10.1063/1.1855198
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume97
dc.description.issue10
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000230168300226
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