Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1855198
Title: Magnetoelectronic device utilizing the Dresselhaus spin-orbit coupling
Authors: Tan, S.G. 
Jalil, M.B.A. 
Liew, T. 
Teo, K.L. 
Chong, T.C. 
Issue Date: 15-May-2005
Source: Tan, S.G., Jalil, M.B.A., Liew, T., Teo, K.L., Chong, T.C. (2005-05-15). Magnetoelectronic device utilizing the Dresselhaus spin-orbit coupling. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1855198
Abstract: We propose a ballistic device model which harnesses the Dresselhaus spin-orbit coupling effect to induce spin polarization ∫P∫ by constraining the transverse electron wave vector kx to specific, quantized values and aligning the crystalline c axis along the electron conduction path z. ∫P∫ induced in this magnetoelectronic device is further enhanced by applying a periodic system of delta magnetoelectric barriers that constitute a net "zero- A " periodic unit. Calculations for GaAs, GaSb, and InSb show a field enhancement of ∫P∫ from peak 2%-3% to 10%-80% near the conduction band. Magnetic and electric potentials have been shown to modulate ∫P∫ with few gate elements required. © 2005 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/70874
ISSN: 00218979
DOI: 10.1063/1.1855198
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