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|Title:||In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry||Authors:||Ngo, Y.S.
|Keywords:||Chemically amplified resist
Critical dimensions control
|Issue Date:||2012||Citation:||Ngo, Y.S., Qu, Y., Tay, A., Lee, T.H. (2012). In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry. Proceedings of SPIE - The International Society for Optical Engineering 8324 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.916133||Abstract:||Strong correlation between de-protection induced thickness reduction and amplified chemical reaction in the exposed area of the chemically amplified resist (CAR) during post-exposure bake (PEB) has been established. The optical properties of the resist film due to the thickness reduction can be detected using a spectroscopic ellipsometer. In this paper, a rotating polarizer spectroscopic ellipsometer is developed and a proposed control scheme is presented for signature profiles matching. With the implementation of the control scheme, wafer-to-wafer critical dimensions (CD) uniformity is improved by 5 times. © 2012 SPIE.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/70606||ISBN:||9780819489807||ISSN:||0277786X||DOI:||10.1117/12.916133|
|Appears in Collections:||Staff Publications|
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