Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.916133
Title: In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry
Authors: Ngo, Y.S.
Qu, Y.
Tay, A. 
Lee, T.H. 
Keywords: Chemically amplified resist
Critical dimensions control
Post-exposure bake
Spectroscopic ellipsometer
Issue Date: 2012
Source: Ngo, Y.S., Qu, Y., Tay, A., Lee, T.H. (2012). In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry. Proceedings of SPIE - The International Society for Optical Engineering 8324 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.916133
Abstract: Strong correlation between de-protection induced thickness reduction and amplified chemical reaction in the exposed area of the chemically amplified resist (CAR) during post-exposure bake (PEB) has been established. The optical properties of the resist film due to the thickness reduction can be detected using a spectroscopic ellipsometer. In this paper, a rotating polarizer spectroscopic ellipsometer is developed and a proposed control scheme is presented for signature profiles matching. With the implementation of the control scheme, wafer-to-wafer critical dimensions (CD) uniformity is improved by 5 times. © 2012 SPIE.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/70606
ISBN: 9780819489807
ISSN: 0277786X
DOI: 10.1117/12.916133
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