Please use this identifier to cite or link to this item:
https://doi.org/10.1116/1.1431961
Title: | In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching | Authors: | Kok, K.W. Yoo, W.J. Sooriakumar, K. |
Issue Date: | Jan-2002 | Citation: | Kok, K.W., Yoo, W.J., Sooriakumar, K. (2002-01). In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1) : 154-158. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1431961 | Abstract: | An in situ trench etching and releasing technique were studied to fabricate high aspect-ratio beams using magnetically enhanced reactive ion etching (MERIE) method. The dependency of MERIE etching rates on open ratio and pattern size was also discussed for high aspect-ratio microelectromechanical systems (MEMS) structures. The results showed that the MERIE etching rates of Si substrate were insensitive to the open ratio in the range from 10% to 50% as compared to inductively coupled plasma etching. | Source Title: | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | URI: | http://scholarbank.nus.edu.sg/handle/10635/70574 | ISSN: | 10711023 | DOI: | 10.1116/1.1431961 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.