Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1431961
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dc.titleIn situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching
dc.contributor.authorKok, K.W.
dc.contributor.authorYoo, W.J.
dc.contributor.authorSooriakumar, K.
dc.date.accessioned2014-06-19T03:13:41Z
dc.date.available2014-06-19T03:13:41Z
dc.date.issued2002-01
dc.identifier.citationKok, K.W., Yoo, W.J., Sooriakumar, K. (2002-01). In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1) : 154-158. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1431961
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70574
dc.description.abstractAn in situ trench etching and releasing technique were studied to fabricate high aspect-ratio beams using magnetically enhanced reactive ion etching (MERIE) method. The dependency of MERIE etching rates on open ratio and pattern size was also discussed for high aspect-ratio microelectromechanical systems (MEMS) structures. The results showed that the MERIE etching rates of Si substrate were insensitive to the open ratio in the range from 10% to 50% as compared to inductively coupled plasma etching.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1431961
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.1431961
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume20
dc.description.issue1
dc.description.page154-158
dc.description.codenJVTBD
dc.identifier.isiut000173985500027
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