Please use this identifier to cite or link to this item:
https://doi.org/10.1116/1.1431961
DC Field | Value | |
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dc.title | In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching | |
dc.contributor.author | Kok, K.W. | |
dc.contributor.author | Yoo, W.J. | |
dc.contributor.author | Sooriakumar, K. | |
dc.date.accessioned | 2014-06-19T03:13:41Z | |
dc.date.available | 2014-06-19T03:13:41Z | |
dc.date.issued | 2002-01 | |
dc.identifier.citation | Kok, K.W., Yoo, W.J., Sooriakumar, K. (2002-01). In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1) : 154-158. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1431961 | |
dc.identifier.issn | 10711023 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/70574 | |
dc.description.abstract | An in situ trench etching and releasing technique were studied to fabricate high aspect-ratio beams using magnetically enhanced reactive ion etching (MERIE) method. The dependency of MERIE etching rates on open ratio and pattern size was also discussed for high aspect-ratio microelectromechanical systems (MEMS) structures. The results showed that the MERIE etching rates of Si substrate were insensitive to the open ratio in the range from 10% to 50% as compared to inductively coupled plasma etching. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1431961 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1116/1.1431961 | |
dc.description.sourcetitle | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | |
dc.description.volume | 20 | |
dc.description.issue | 1 | |
dc.description.page | 154-158 | |
dc.description.coden | JVTBD | |
dc.identifier.isiut | 000173985500027 | |
Appears in Collections: | Staff Publications |
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