Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1431961
Title: In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching
Authors: Kok, K.W.
Yoo, W.J. 
Sooriakumar, K.
Issue Date: Jan-2002
Citation: Kok, K.W., Yoo, W.J., Sooriakumar, K. (2002-01). In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1) : 154-158. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1431961
Abstract: An in situ trench etching and releasing technique were studied to fabricate high aspect-ratio beams using magnetically enhanced reactive ion etching (MERIE) method. The dependency of MERIE etching rates on open ratio and pattern size was also discussed for high aspect-ratio microelectromechanical systems (MEMS) structures. The results showed that the MERIE etching rates of Si substrate were insensitive to the open ratio in the range from 10% to 50% as compared to inductively coupled plasma etching.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/70574
ISSN: 10711023
DOI: 10.1116/1.1431961
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Nov 14, 2018

WEB OF SCIENCETM
Citations

5
checked on Nov 14, 2018

Page view(s)

38
checked on Nov 17, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.