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|Title:||Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process||Authors:||Chong, D.
|Issue Date:||2002||Citation:||Chong, D.,Yoo, W.J.,Chan, L.,See, A. (2002). Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process. Materials Research Society Symposium - Proceedings 716 : 197-202. ScholarBank@NUS Repository.||Abstract:||The effects of the poly-Si annealing on gate oxide charging damage in the gate etching process were investigated. Our electrical test results show that gate oxide charging damage can be reduced if the poly-Si is not annealed prior to the gate etching process.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/70098||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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