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https://scholarbank.nus.edu.sg/handle/10635/70098
| Title: | Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process | Authors: | Chong, D. Yoo, W.J. Chan, L. See, A. |
Issue Date: | 2002 | Citation: | Chong, D.,Yoo, W.J.,Chan, L.,See, A. (2002). Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process. Materials Research Society Symposium - Proceedings 716 : 197-202. ScholarBank@NUS Repository. | Abstract: | The effects of the poly-Si annealing on gate oxide charging damage in the gate etching process were investigated. Our electrical test results show that gate oxide charging damage can be reduced if the poly-Si is not annealed prior to the gate etching process. | Source Title: | Materials Research Society Symposium - Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/70098 | ISSN: | 02729172 |
| Appears in Collections: | Staff Publications |
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