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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70098
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dc.titleEffects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process
dc.contributor.authorChong, D.
dc.contributor.authorYoo, W.J.
dc.contributor.authorChan, L.
dc.contributor.authorSee, A.
dc.date.accessioned2014-06-19T03:08:15Z
dc.date.available2014-06-19T03:08:15Z
dc.date.issued2002
dc.identifier.citationChong, D.,Yoo, W.J.,Chan, L.,See, A. (2002). Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process. Materials Research Society Symposium - Proceedings 716 : 197-202. ScholarBank@NUS Repository.
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70098
dc.description.abstractThe effects of the poly-Si annealing on gate oxide charging damage in the gate etching process were investigated. Our electrical test results show that gate oxide charging damage can be reduced if the poly-Si is not annealed prior to the gate etching process.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium - Proceedings
dc.description.volume716
dc.description.page197-202
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
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