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|Title:||Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process|
|Citation:||Chong, D.,Yoo, W.J.,Chan, L.,See, A. (2002). Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process. Materials Research Society Symposium - Proceedings 716 : 197-202. ScholarBank@NUS Repository.|
|Abstract:||The effects of the poly-Si annealing on gate oxide charging damage in the gate etching process were investigated. Our electrical test results show that gate oxide charging damage can be reduced if the poly-Si is not annealed prior to the gate etching process.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
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