Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70098
Title: Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process
Authors: Chong, D.
Yoo, W.J. 
Chan, L.
See, A.
Issue Date: 2002
Source: Chong, D.,Yoo, W.J.,Chan, L.,See, A. (2002). Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process. Materials Research Society Symposium - Proceedings 716 : 197-202. ScholarBank@NUS Repository.
Abstract: The effects of the poly-Si annealing on gate oxide charging damage in the gate etching process were investigated. Our electrical test results show that gate oxide charging damage can be reduced if the poly-Si is not annealed prior to the gate etching process.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/70098
ISSN: 02729172
Appears in Collections:Staff Publications

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