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|Title:||A review of laser induced techniques for microelectronic failure analysis||Authors:||Phang, J.C.H.
|Issue Date:||2004||Citation:||Phang, J.C.H.,Chan, D.S.H.,Palaniappan, M.,Chin, J.M.,Davis, B.,Bruce, M.,Wilcox, J.,Gilfeather, G.,Chua, C.M.,Koh, L.S.,Ng, H.Y.,Tan, S.H. (2004). A review of laser induced techniques for microelectronic failure analysis. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 255-261. ScholarBank@NUS Repository.||Abstract:||Recent developments have seen the use of scanning focused near infra-red (NIR) laser beams for fault localization and defect characterization in microelectronic failure analysis. Fault localization techniques are based on thermal stimulation and include power alteration techniques such as OBIRCH, TIVA, SEI, and tester based techniques such as RIL-SDL. Defect characterization techniques are based on carrier stimulation and include OBIC, SCOBIC and LIVA. A review of the concepts and application of these techniques together with the instrumentation requirements to effectively deploy these techniques are presented in this paper. ©2004 IEEE.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/69040|
|Appears in Collections:||Staff Publications|
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