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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/69040
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dc.titleA review of laser induced techniques for microelectronic failure analysis
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorPalaniappan, M.
dc.contributor.authorChin, J.M.
dc.contributor.authorDavis, B.
dc.contributor.authorBruce, M.
dc.contributor.authorWilcox, J.
dc.contributor.authorGilfeather, G.
dc.contributor.authorChua, C.M.
dc.contributor.authorKoh, L.S.
dc.contributor.authorNg, H.Y.
dc.contributor.authorTan, S.H.
dc.date.accessioned2014-06-19T02:56:09Z
dc.date.available2014-06-19T02:56:09Z
dc.date.issued2004
dc.identifier.citationPhang, J.C.H.,Chan, D.S.H.,Palaniappan, M.,Chin, J.M.,Davis, B.,Bruce, M.,Wilcox, J.,Gilfeather, G.,Chua, C.M.,Koh, L.S.,Ng, H.Y.,Tan, S.H. (2004). A review of laser induced techniques for microelectronic failure analysis. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 255-261. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69040
dc.description.abstractRecent developments have seen the use of scanning focused near infra-red (NIR) laser beams for fault localization and defect characterization in microelectronic failure analysis. Fault localization techniques are based on thermal stimulation and include power alteration techniques such as OBIRCH, TIVA, SEI, and tester based techniques such as RIL-SDL. Defect characterization techniques are based on carrier stimulation and include OBIC, SCOBIC and LIVA. A review of the concepts and application of these techniques together with the instrumentation requirements to effectively deploy these techniques are presented in this paper. ©2004 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page255-261
dc.identifier.isiutNOT_IN_WOS
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