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|Title:||Valley filter in strain engineered graphene||Authors:||Fujita, T.
|Issue Date:||26-Jul-2010||Citation:||Fujita, T., Jalil, M.B.A., Tan, S.G. (2010-07-26). Valley filter in strain engineered graphene. Applied Physics Letters 97 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3473725||Abstract:||We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic stripes. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, the output current can be made to consist of only a single valley contribution. Perfect valley filtering is achievable within experimentally accessible parameters. © 2010 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/57770||ISSN:||00036951||DOI:||10.1063/1.3473725|
|Appears in Collections:||Staff Publications|
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