Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3473725
Title: Valley filter in strain engineered graphene
Authors: Fujita, T. 
Jalil, M.B.A. 
Tan, S.G. 
Issue Date: 26-Jul-2010
Source: Fujita, T., Jalil, M.B.A., Tan, S.G. (2010-07-26). Valley filter in strain engineered graphene. Applied Physics Letters 97 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3473725
Abstract: We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic stripes. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, the output current can be made to consist of only a single valley contribution. Perfect valley filtering is achievable within experimentally accessible parameters. © 2010 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57770
ISSN: 00036951
DOI: 10.1063/1.3473725
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