Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3473725
DC FieldValue
dc.titleValley filter in strain engineered graphene
dc.contributor.authorFujita, T.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-06-17T03:10:00Z
dc.date.available2014-06-17T03:10:00Z
dc.date.issued2010-07-26
dc.identifier.citationFujita, T., Jalil, M.B.A., Tan, S.G. (2010-07-26). Valley filter in strain engineered graphene. Applied Physics Letters 97 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3473725
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57770
dc.description.abstractWe propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic stripes. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, the output current can be made to consist of only a single valley contribution. Perfect valley filtering is achievable within experimentally accessible parameters. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3473725
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3473725
dc.description.sourcetitleApplied Physics Letters
dc.description.volume97
dc.description.issue4
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000281059200100
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