Please use this identifier to cite or link to this item:
|Title:||Topological insulator cell for memory and magnetic sensor applications||Authors:||Fujita, T.
|Issue Date:||Sep-2011||Citation:||Fujita, T., Jalil, M.B.A., Tan, S.G. (2011-09). Topological insulator cell for memory and magnetic sensor applications. Applied Physics Express 4 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.4.094201||Abstract:||We propose a memory device based on magnetically doped surfaces of three-dimensional topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the readout process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. ©; 2011 The Japan Society of Applied Physics.||Source Title:||Applied Physics Express||URI:||http://scholarbank.nus.edu.sg/handle/10635/57684||ISSN:||18820778||DOI:||10.1143/APEX.4.094201|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.