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https://doi.org/10.1143/APEX.4.094201
Title: | Topological insulator cell for memory and magnetic sensor applications | Authors: | Fujita, T. Jalil, M.B.A. Tan, S.G. |
Issue Date: | Sep-2011 | Citation: | Fujita, T., Jalil, M.B.A., Tan, S.G. (2011-09). Topological insulator cell for memory and magnetic sensor applications. Applied Physics Express 4 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.4.094201 | Abstract: | We propose a memory device based on magnetically doped surfaces of three-dimensional topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the readout process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. ©; 2011 The Japan Society of Applied Physics. | Source Title: | Applied Physics Express | URI: | http://scholarbank.nus.edu.sg/handle/10635/57684 | ISSN: | 18820778 | DOI: | 10.1143/APEX.4.094201 |
Appears in Collections: | Staff Publications |
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