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Please use this identifier to cite or link to this item: https://doi.org/10.1143/APEX.4.094201
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dc.titleTopological insulator cell for memory and magnetic sensor applications
dc.contributor.authorFujita, T.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-06-17T03:09:00Z
dc.date.available2014-06-17T03:09:00Z
dc.date.issued2011-09
dc.identifier.citationFujita, T., Jalil, M.B.A., Tan, S.G. (2011-09). Topological insulator cell for memory and magnetic sensor applications. Applied Physics Express 4 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.4.094201
dc.identifier.issn18820778
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57684
dc.description.abstractWe propose a memory device based on magnetically doped surfaces of three-dimensional topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the readout process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. ©; 2011 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/APEX.4.094201
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/APEX.4.094201
dc.description.sourcetitleApplied Physics Express
dc.description.volume4
dc.description.issue9
dc.description.page-
dc.identifier.isiut000294673300031
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