Please use this identifier to cite or link to this item:
|Title:||Topological insulator cell for memory and magnetic sensor applications|
|Authors:||Fujita, T. |
|Source:||Fujita, T., Jalil, M.B.A., Tan, S.G. (2011-09). Topological insulator cell for memory and magnetic sensor applications. Applied Physics Express 4 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.4.094201|
|Abstract:||We propose a memory device based on magnetically doped surfaces of three-dimensional topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the readout process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. ©; 2011 The Japan Society of Applied Physics.|
|Source Title:||Applied Physics Express|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 28, 2018
WEB OF SCIENCETM
checked on Feb 21, 2018
checked on Feb 27, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.