Please use this identifier to cite or link to this item: https://doi.org/10.1143/APEX.4.094201
Title: Topological insulator cell for memory and magnetic sensor applications
Authors: Fujita, T. 
Jalil, M.B.A. 
Tan, S.G. 
Issue Date: Sep-2011
Source: Fujita, T., Jalil, M.B.A., Tan, S.G. (2011-09). Topological insulator cell for memory and magnetic sensor applications. Applied Physics Express 4 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.4.094201
Abstract: We propose a memory device based on magnetically doped surfaces of three-dimensional topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the readout process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. ©; 2011 The Japan Society of Applied Physics.
Source Title: Applied Physics Express
URI: http://scholarbank.nus.edu.sg/handle/10635/57684
ISSN: 18820778
DOI: 10.1143/APEX.4.094201
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