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|Title:||Topological insulator cell for memory and magnetic sensor applications|
|Authors:||Fujita, T. |
|Citation:||Fujita, T., Jalil, M.B.A., Tan, S.G. (2011-09). Topological insulator cell for memory and magnetic sensor applications. Applied Physics Express 4 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.4.094201|
|Abstract:||We propose a memory device based on magnetically doped surfaces of three-dimensional topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the readout process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. ©; 2011 The Japan Society of Applied Physics.|
|Source Title:||Applied Physics Express|
|Appears in Collections:||Staff Publications|
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