Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1391225

Title:	Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy
Authors:	Ni, H.Q. Lu, Y.F. Liu, Z.Y. Qiu, H. Wang, W.J. Ren, Z.M. Chow, S.K. Jie, Y.X.
Issue Date:	6-Aug-2001
Citation:	Ni, H.Q., Lu, Y.F., Liu, Z.Y., Qiu, H., Wang, W.J., Ren, Z.M., Chow, S.K., Jie, Y.X. (2001-08-06). Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy. Applied Physics Letters 79 (6) : 812-814. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1391225
Abstract:	We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured. © 2001 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/56400
ISSN:	00036951
DOI:	10.1063/1.1391225
Appears in Collections:	Staff Publications

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