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Title: Disorder-free sputtering method on graphene
Authors: Qiu, X.P.
Shin, Y.J.
Niu, J.
Kulothungasagaran, N.
Kalon, G. 
Qiu, C.
Yu, T. 
Yang, H. 
Issue Date: 2012
Citation: Qiu, X.P., Shin, Y.J., Niu, J., Kulothungasagaran, N., Kalon, G., Qiu, C., Yu, T., Yang, H. (2012). Disorder-free sputtering method on graphene. AIP Advances 2 (3) : -. ScholarBank@NUS Repository.
Abstract: Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes. Copyright 2012 Author(s).
Source Title: AIP Advances
ISSN: 21583226
DOI: 10.1063/1.4739783
Appears in Collections:Staff Publications

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