Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4739783
Title: Disorder-free sputtering method on graphene
Authors: Qiu, X.P.
Shin, Y.J.
Niu, J.
Kulothungasagaran, N.
Kalon, G. 
Qiu, C.
Yu, T. 
Yang, H. 
Issue Date: 2012
Source: Qiu, X.P., Shin, Y.J., Niu, J., Kulothungasagaran, N., Kalon, G., Qiu, C., Yu, T., Yang, H. (2012). Disorder-free sputtering method on graphene. AIP Advances 2 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4739783
Abstract: Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes. Copyright 2012 Author(s).
Source Title: AIP Advances
URI: http://scholarbank.nus.edu.sg/handle/10635/55670
ISSN: 21583226
DOI: 10.1063/1.4739783
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