Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4739783
DC FieldValue
dc.titleDisorder-free sputtering method on graphene
dc.contributor.authorQiu, X.P.
dc.contributor.authorShin, Y.J.
dc.contributor.authorNiu, J.
dc.contributor.authorKulothungasagaran, N.
dc.contributor.authorKalon, G.
dc.contributor.authorQiu, C.
dc.contributor.authorYu, T.
dc.contributor.authorYang, H.
dc.date.accessioned2014-06-17T02:45:46Z
dc.date.available2014-06-17T02:45:46Z
dc.date.issued2012
dc.identifier.citationQiu, X.P., Shin, Y.J., Niu, J., Kulothungasagaran, N., Kalon, G., Qiu, C., Yu, T., Yang, H. (2012). Disorder-free sputtering method on graphene. AIP Advances 2 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4739783
dc.identifier.issn21583226
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55670
dc.description.abstractDeposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes. Copyright 2012 Author(s).
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4739783
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4739783
dc.description.sourcetitleAIP Advances
dc.description.volume2
dc.description.issue3
dc.description.page-
dc.identifier.isiut000309388800021
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