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|Title:||Influence of plasma treatment on low-k dielectric films in semiconductor manufacturing||Authors:||Yang, P.
|Keywords:||Atomic force microscopy (AFM)
Low-k dielectric thin films
|Issue Date:||Aug-2005||Citation:||Yang, P., Lu, D., Kumar, R., Moser, H.O. (2005-08). Influence of plasma treatment on low-k dielectric films in semiconductor manufacturing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 238 (1-4) : 310-313. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.06.068||Abstract:||High-resolution X-ray reflectometry (XRR) at SSLS' XDD beamline has been used to characterise films of low dielectric constant materials. In this paper, we present results of reflectometry studies of ultra-low k dielectric films made of commercial SiLK and carbon doped silicon oxide, i.e. SiOCH (MSQ, methylsilsesquioxane). Reflectivity reveals that the films can suffer severe roughening in surface and change in their thickness depending on different plasma treatments. The densities of the layers can change, which will lead to changes in the k-values. The results are being used for the selection and optimization of plasma processes used in semiconductor manufacturing. © 2005 Elsevier B.V. All rights reserved.||Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms||URI:||http://scholarbank.nus.edu.sg/handle/10635/51613||ISSN:||0168583X||DOI:||10.1016/j.nimb.2005.06.068|
|Appears in Collections:||Staff Publications|
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