Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.nimb.2005.06.068
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dc.titleInfluence of plasma treatment on low-k dielectric films in semiconductor manufacturing
dc.contributor.authorYang, P.
dc.contributor.authorLu, D.
dc.contributor.authorKumar, R.
dc.contributor.authorMoser, H.O.
dc.date.accessioned2014-04-24T10:16:45Z
dc.date.available2014-04-24T10:16:45Z
dc.date.issued2005-08
dc.identifier.citationYang, P., Lu, D., Kumar, R., Moser, H.O. (2005-08). Influence of plasma treatment on low-k dielectric films in semiconductor manufacturing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 238 (1-4) : 310-313. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.06.068
dc.identifier.issn0168583X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/51613
dc.description.abstractHigh-resolution X-ray reflectometry (XRR) at SSLS' XDD beamline has been used to characterise films of low dielectric constant materials. In this paper, we present results of reflectometry studies of ultra-low k dielectric films made of commercial SiLK and carbon doped silicon oxide, i.e. SiOCH (MSQ, methylsilsesquioxane). Reflectivity reveals that the films can suffer severe roughening in surface and change in their thickness depending on different plasma treatments. The densities of the layers can change, which will lead to changes in the k-values. The results are being used for the selection and optimization of plasma processes used in semiconductor manufacturing. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.nimb.2005.06.068
dc.sourceScopus
dc.subjectAtomic force microscopy (AFM)
dc.subjectLow-k dielectric thin films
dc.subjectRoughness
dc.subjectSynchrotron radiation
dc.subjectX-ray reflectivity
dc.typeConference Paper
dc.contributor.departmentMECHANICAL ENGINEERING
dc.contributor.departmentSINGAPORE SYNCHROTRON LIGHT SOURCE
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.doi10.1016/j.nimb.2005.06.068
dc.description.sourcetitleNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.description.volume238
dc.description.issue1-4
dc.description.page310-313
dc.description.codenNIMBE
dc.identifier.isiut000232390400065
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