Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.nimb.2005.06.068
Title: Influence of plasma treatment on low-k dielectric films in semiconductor manufacturing
Authors: Yang, P. 
Lu, D. 
Kumar, R. 
Moser, H.O. 
Keywords: Atomic force microscopy (AFM)
Low-k dielectric thin films
Roughness
Synchrotron radiation
X-ray reflectivity
Issue Date: Aug-2005
Citation: Yang, P., Lu, D., Kumar, R., Moser, H.O. (2005-08). Influence of plasma treatment on low-k dielectric films in semiconductor manufacturing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 238 (1-4) : 310-313. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.06.068
Abstract: High-resolution X-ray reflectometry (XRR) at SSLS' XDD beamline has been used to characterise films of low dielectric constant materials. In this paper, we present results of reflectometry studies of ultra-low k dielectric films made of commercial SiLK and carbon doped silicon oxide, i.e. SiOCH (MSQ, methylsilsesquioxane). Reflectivity reveals that the films can suffer severe roughening in surface and change in their thickness depending on different plasma treatments. The densities of the layers can change, which will lead to changes in the k-values. The results are being used for the selection and optimization of plasma processes used in semiconductor manufacturing. © 2005 Elsevier B.V. All rights reserved.
Source Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
URI: http://scholarbank.nus.edu.sg/handle/10635/51613
ISSN: 0168583X
DOI: 10.1016/j.nimb.2005.06.068
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

13
checked on Aug 16, 2018

WEB OF SCIENCETM
Citations

12
checked on Jul 31, 2018

Page view(s)

32
checked on Mar 12, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.