GaN-based semiconductor saturable absorber mirror operating around 415 nm

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.07.138

Title:	GaN-based semiconductor saturable absorber mirror operating around 415 nm
Authors:	Xiang, N. Lin, F. Li, H.P. Liu, H.F. Liu, W. Ji, W. Chua, S.J.
Keywords:	GaN Saturable absorber Semiconductors
Issue Date:	26-Mar-2007
Citation:	Xiang, N., Lin, F., Li, H.P., Liu, H.F., Liu, W., Ji, W., Chua, S.J. (2007-03-26). GaN-based semiconductor saturable absorber mirror operating around 415 nm. Thin Solid Films 515 (10) : 4484-4487. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.138
Abstract:	We report a broadband GaN-based semiconductor saturable absorber mirror (SESAM) operating around 415 nm. The GaInN quantum wells (QWs) acting as saturable absorbers were grown by metal-organic chemical vapor deposition (MOCVD). A broadband dielectric high-reflective distributed Bragg reflector (DBR) was deposited onto the QW sample using plasma-enhanced chemical vapor deposition (PECVD) to build the SESAM. The SESAM has a stopband of over 100 nm. The linear and nonlinear transmission/absorption from QWs and the reflectance from DBR and SESAM were studied. This SESAM can be applied in passively mode-locking blue lasers such as GaN-based semiconductor lasers for producing ultra-short optical pulses. © 2006 Elsevier B.V. All rights reserved.
Source Title:	Thin Solid Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/50931
ISSN:	00406090
DOI:	10.1016/j.tsf.2006.07.138
Appears in Collections:	Staff Publications

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