Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.07.138
Title: GaN-based semiconductor saturable absorber mirror operating around 415 nm
Authors: Xiang, N. 
Lin, F. 
Li, H.P. 
Liu, H.F. 
Liu, W.
Ji, W. 
Chua, S.J.
Keywords: GaN
Saturable absorber
Semiconductors
Issue Date: 26-Mar-2007
Source: Xiang, N., Lin, F., Li, H.P., Liu, H.F., Liu, W., Ji, W., Chua, S.J. (2007-03-26). GaN-based semiconductor saturable absorber mirror operating around 415 nm. Thin Solid Films 515 (10) : 4484-4487. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.138
Abstract: We report a broadband GaN-based semiconductor saturable absorber mirror (SESAM) operating around 415 nm. The GaInN quantum wells (QWs) acting as saturable absorbers were grown by metal-organic chemical vapor deposition (MOCVD). A broadband dielectric high-reflective distributed Bragg reflector (DBR) was deposited onto the QW sample using plasma-enhanced chemical vapor deposition (PECVD) to build the SESAM. The SESAM has a stopband of over 100 nm. The linear and nonlinear transmission/absorption from QWs and the reflectance from DBR and SESAM were studied. This SESAM can be applied in passively mode-locking blue lasers such as GaN-based semiconductor lasers for producing ultra-short optical pulses. © 2006 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/50931
ISSN: 00406090
DOI: 10.1016/j.tsf.2006.07.138
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