Please use this identifier to cite or link to this item:
https://doi.org/10.1103/PhysRevApplied.15.024063
| Title: | Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory | Authors: | Rahul Mishra Taehwan Kim Jongsun Park Hyunsoo Yang |
Issue Date: | 25-Feb-2021 | Citation: | Rahul Mishra, Taehwan Kim, Jongsun Park, Hyunsoo Yang (2021-02-25). Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory. Physical Review Applied 15 (2). ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevApplied.15.024063 | Rights: | CC0 1.0 Universal | Source Title: | Physical Review Applied | URI: | https://scholarbank.nus.edu.sg/handle/10635/249144 | ISSN: | 2331-7019 | DOI: | 10.1103/PhysRevApplied.15.024063 | Rights: | CC0 1.0 Universal |
| Appears in Collections: | Staff Publications Elements |
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| Multi-bit PRA_1Feb2021_allAccepted.pdf | 722.54 kB | Adobe PDF | OPEN | Post-print | View/Download |
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